SI6426DQ siliconix s-49534erev. a, 06-oct-97 1 n-channel 2.5-v (g-s) rated mosfet product summary v ds (v) r ds(on) ( ) i d (a) 20 0.035 @ v gs = 4.5 v 5.4 20 0.04 @ v gs = 2.5 v 4.9 d g s* n-channel mosfet SI6426DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view *source pins 2, 3, 6, and 7 must be tied common. absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d 5.4 continuous drain current (t j = 150 c) a t a = 70 c i d 4.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.25 maximum power dissipation a t a = 25 c p d 1.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c thermal resistance ratings
maximum junction-to-ambient a r thja 83 c/w notes a. surface mounted on fr4 board, t 10 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70174. a spice model data sheet is available for this product (faxback document #70545).
SI6426DQ 2 siliconix s-49534erev. a, 06-oct-97 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 5 a on state drain current a i d( ) v ds 5 v, v gs = 4.5 v 20 a on - state drain current a i d(on) v ds 5 v, v gs = 2.5 v 8 a drain source on state resistance a r v gs = 4.5 v, i d = 5.4 a 0.025 0.035 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 2.5 v, i d = 4.9 a 0.030 0.04 forward transconductance a g fs v ds = 10 v, i d = 5.4 a 22 s diode forward voltage a v sd i s = 1.25 a, v gs = 0 v 0.7 1.2 v dynamic b total gate charge q g 18 35 gate-source charge q gs v ds = 6 v, v gs = 4.5 v, i d = 5.4 a 2.5 nc gate-drain charge q gd 4 turn-on delay time t d(on) 35 60 rise time t r v dd = 6 v, r l = 6 65 100 turn-off delay time t d(off) i d 1 a, v gen = 4.5 v, r g = 6 100 150 ns fall time t f 33 60 source-drain reverse recovery time t rr i f = 1.25 a, di/dt = 100 a/ s 50 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6426DQ siliconix s-49534erev. a, 06-oct-97 3 typical characteristics (25 c unless otherwise noted) 0 8 16 24 32 40 012345 0 2 4 6 8 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 50 25 0 25 50 75 100 125 150 0 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 36 0 400 800 1200 1600 2000 2400 2800 0 4 8 12 16 20 0 5 10 15 20 25 0 0.5 1.0 1.5 2.0 2.5 v gs = 5 thru 3 v 1.5 v 2 v v gs = 2.5 v v ds = 6 v i d = 5.4 a v gs = 4.5 v i d = 5.4 a c rss c oss c iss output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 55 c t c = 125 c 25 c 2.5 v 1, 0.5 v v gs = 4.5 v
SI6426DQ 4 siliconix s-49534erev. a, 06-oct-97 typical characteristics (25 c unless otherwise noted) power (w) 0 0.06 0.12 0.18 0.24 0.30 012345 0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 25 0 25 50 75 100 125 150 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 1 10 40 i d = 5.4 a i d = 250 a duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.001 0 0.1 40 50 10 20 30 1 10 100 1. duty cycle, d = 2. per unit base = r thja = 83 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) t j = 25 c t j = 150 c 0.01 0.5 0.7 0.9 1.1 1.3
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